Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption
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Articles you may be interested in High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111) Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Appl.
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Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy
Articles you may be interested in Reaction kinetics and growth window for plasma-assisted molecular beam epitaxy of Ga2O3: Incorporation of Ga vs. Ga2O desorption Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy Appl.
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